Electrical Characteristic Analysis and Device Simulation of Polycrystalline Silicon Thin-Film Transistors

摘要

I will report electrical characteristic analysis and device simulation of polycrystalline silicon thin-film transistors (poly-Si TFTs). First, as for the electrical characteristic analysis, I will explain extraction techniques of trap densities at front- and back-insulator interfaces and grain boundaries, and I will report extraction results of actual devices. Next, using the device simulation, I will investigate dependence of transistor characteristics on the trap densities, and based on the simulation results, I will evaluate actual transistor characteristics. Finally, I will introduce simulation results about dependence of current-voltage characteristics on grain boundary location, electric field profile around grain boundaries with surface roughness, current paths in poly-Si films and current density enhancement at poly-Si edges.