Analytical model of the trap-density-dependent programming characteristics of MONOS memories and its application to a MONOS memory

摘要

We have investigated the dependence of the programming characteristics of MONOS nonvolatile memories on the density of Si-H/N-H bonds in the nitride layer. It was found that programming speed, dV{sub}(th)/dt, is proportional to the density of Si-H bonds. Based on this result, we constructed analytical model of the programming characteristics depending on the trap density in the nitride layer. From the fit of our model to the experimental results, tunneling barrier height and electron capturing efficiency of the nitride can be extracted. We applied our model to a MONS memory with a nitride-tunneling barrier. The result shows that a MONS memory is programmed faster than a conventional MONOS memory.