［招待講演］Stress Investigation of Annular-Trench-Isolated （ATI） Through Silicon Via （TSV）

摘要

The methods as parylene substitute of SiO_2 as dielectric layer and annular structure lose efficacy for thermal stress reduction with Through Silicon Via （TSV） scaling down. A novel Annular-Trench-Isolated （ATI） TSV structure was proposed to reduce thermal stress level in Si substrate. A ring of Si is remained between the metal core and insulator layer. The ATI TSV was successfully fabricated with two separate etching processes for the insulator parylene-HT trench and the metal solder core. The thermal stress of ATI TSV was investigated by polarized Raman spectroscopy measurements with varying temperature, indicating lower stress level than regular TSV.