In situ chemical vapor deposition manufacturing processes of barrier/copper seed films for electroplating

摘要

Recently, copper (Cu) films for wiring of microelectronic devices are formed by electroplating. In order to do the electroplating, barrier/Cu seed films are required. As dual damascene and borderless technology advance, the demand for good coverage harrier/Cu seed layered film on complicated and fine pattern is increased. In this paper, chemical vapor deposition (CVD) technology are developed to produce thin continues seed CVD-Cu film. The key point is keeping the uniformity of incubation time on wafer surface. The adhesion between barrier film and Cu seed has been improved by depositing barrier/Cu film without air break (in situ) and after annealing.