Au and Al films recrystallization under high-energy electron irradiation

摘要

Radiation- and thermal-induced recrystallization processes of Au and Al films grown on single-crystal Si substrates have been investigated under different electron irradiation and thermal heating conditions. It was established that the recrystallization process is not thermal-controlled. Mechanism of the recrystallization due to radiation- or thermal-induced formation of so-called antibonding electrons has been proposed.