Enhancement of Adjustable Threshold Voltage Range Due to Quantum Confinement Effect in Ultra Thin Body pMOSFETs

摘要

The body effect in ultra thin body SOI MOSFETs has been investigated using analytical model and experiments. It is demonstrated for the first time that the adjustable threshold voltage range by substrate bias is enhanced due to the quantum confinement effect in ultra thin body SOL The enhancement ratio of the adjustable threshold voltage range in a 4.3 nm thick SOI MOSFET is around 10%. This indicates that ultra thin body MOSFETs are useful not only for suppressing the short channel effects, but also for suppressing the off-leak current in the Variable Threshold CMOS (VTCMOS) scheme.