Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser

Shoichi YOSHITOMI; Kentaro YAMANAKA; Yusei GOTO; Nobuhiko NISHIYAMA; Shigehisa ARAI

首页> 外文期刊>電子情報通信学会技術研究報告. 光エレクトロニクス. Optoelectronics >Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser

【24h】

Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser

机译：连续波操作高达90°C的NPN-AlGainAs / InP晶体管激光器

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Improvement of temperature performance in AlGaInAs/InP transistor laser (TL) was demonstrated. By adopting a high heat dissipation structure with high-speed compatible wide electrode pad and thick Au plating, a record high continuous-wave (CW) operation temperature of 90 °C was obtained for 1.3-μm wavelength npn-AlGaInAs/InP TLs.

机译：证实了在AlGainAS / InP晶体管激光器（TL）中的温度性能的提高。通过采用具有高速兼容宽电极焊盘和厚的AU电镀的高散热结构，获得1.3μm波长NPN-AlGainas / InP TLS的记录高连续波（CW）操作温度为90℃。

著录项

来源
《電子情報通信学会技術研究報告. 光エレクトロニクス. Optoelectronics》 |2018年第348期|共4页
作者
Shoichi YOSHITOMI; Kentaro YAMANAKA; Yusei GOTO; Nobuhiko NISHIYAMA; Shigehisa ARAI;
展开▼
作者单位

Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类光电子技术的应用;
关键词
Transistor Laser; Semiconductor Laser; Bipolar Transistor; Buried Heterostructure; AlGaInAs;

机译：晶体管激光器;半导体激光器;双极晶体管;埋藏异质结构;藻类;

相似文献

外文文献
中文文献
专利

1. Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser [J] . Shoichi YOSHITOMI, Kentaro YAMANAKA, Yusei GOTO, 電子情報通信学会技術研究報告. 光エレクトロニクス. Optoelectronics . 2018,第348期

机译：连续波操作高达90°C的NPN-AlGainAs / InP晶体管激光器
2. Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C [J] . Yoshitomi S., Yamanaka K., Goto Y., Japanese journal of applied physics . 2020,第4期

机译：1.3μm波长NPN AlGainas / InP晶体管激光器的连续波操作可达90°C
3. Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-$mu{rm m}$ Wavelength [J] . Sato N., Shirao M., Sato T., Photonics Technology Letters, IEEE . 2013,第8期

机译：波长为1.3-nform的npn-AlGaInAs晶体管激光器在室温下的连续波操作- $ mu {rm m} $ 波长
4. 90°C CW Operation of 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers by Thick and Wide Base-Electrode [C] . Shoichi Yoshitomi, Kentaro Yamanaka, Yusei Goto, International Semiconductor Laser Conference . 2018

机译：厚和宽基极电极对1.3μm波长的npn-AlGaInAs / InP晶体管激光器的90°CW操作
5. InAlGaAs/InP Light Emitting Transistors and Transistor Lasers Operating Near 1.55 microm. [D] . Huang, Yong. 2010

机译：InAlGaAs / InP发光晶体管和晶体管激光器工作在1.55微米附近。
6. Toward continuous-wave operation of organic semiconductor lasers [O] . Atula S. D. Sandanayaka, Toshinori Matsushima, Fatima Bencheikh, 2017

机译：走向有机半导体激光器的连续波操作
7. Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions [O] . Masashi Yukinari, Noriaki Sato, Nobuhiko Nishiyama, 2014

机译：各种操作条件下1.3微米NPN-AlGainas / InP晶体管激光器的光谱特性
8. Continuous-wave operation of InAsSb/InP quantum - dot lasers near 2 (mu)m at room temperature [R] . Qiu, Yueming, Uhl, David, Keo, Sam 2004

机译：Inassb / Inp量子点激光器在室温下接近2（μm）的连续波操作

Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser

摘要

著录项

相似文献

相关主题

期刊订阅