0.18μm high-speed GaAs-MESFET processing with i-line lithography & ion-implantation technique

摘要

Shorter gate and thinner channel are necessary to realize faster FET. We successfully obtained 0.18 μm gate GaAs MESFETs with excellent uniformity and reproducibility using i-line lithography and ion-implantation that established as a mass production technique. Our FET's current gain cut off frequency (f{sub}T) is 100GHz (standard deviation 5GHz). And the standard deviation of threshold voltage (Vth) is as small as 34mV, reproducibility of wafer to wafer is as small as ± 45mV.