The electrical characteristics of deep metal contact to P+active in MDL (merged DRAM and logic) interconnection application

摘要

The electrical characteristics of deep M1C_P+ active resistance with various process conditions are evaluated. The changes of contact resistance were checked for the metal contacts with several contact aspect ratio and different barrier metal structures. We obtained the stable M1C_P+ active resistance, which had 6.7～11.9 contact aspect ratios. We calculated TiSi{sub}2/P+Si interface Schottky barrier height and doping levels of metal contact interface with various barrier metal Ti thicknesses from the interpretation of external voltage dependence of M1C_P+ Kelvin resistance by using the Thermionic-Field emission model. We explained the barrier metal Ti thickness effect to metal contact to P+ active resistance with these results.