Fabrication and Analysis of the Current Transport Mechanism of Ni/n-GaN Schottky Barrier Diodes through Different Models

摘要

The current transport mechanism of indigenously fabricated Ni/n-GaN Schottky barrier diodes (SBDs) has been analysed using the current-voltage (I-V) and capacitance-voltage (C-V) measurements. Various models like Rhoderick's method, Cheung's method, Norde's method, modified Norde's method, Hernandez's method, and Chattopadhyay's method have been used to extract the different electric parameters from the I-V curve. A comparison has been made between the various electrical parameters such as ideality factor, barrier height, and series resistance, which are extracted from the forward bias I-V curve of Ni/n-GaN SBDs. The carrier concentration of the substrate and the barrier height is obtained from C-V characteristics of Ni/n-GaN SBDs. We observe from the reverse current characteristics that the Ni/n-GaN SBDs show the dominance of Schottky emission in intermediate and higher voltages.