Effect of p-μc-Si_(1-x)O_x:H layer on performance of hetero-junction microcrystalline silicon solar cells under light concentration

摘要

Preparation of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si_(1-x)O_x:H) by 13.56 MHz RF-PECVD method for use as a p-layer of hetero-junction μc-Si:H solar cells is presented. We investigated effects of wide-gap p-μc-Si_(1-x)O_x:H layer on the performance of hetero-junction μc-Si:H solar cells under various light intensity. We observed that a wide-gap p-μc-Si_(1-x)O_x:H was effective in improving the open-circuit voltage (V_(oc)) of the solar cells. We also confirmed that the V_(oc) logarithmically increased with increasing light intensity, and the enhancement of V_(oc) became larger with increasing band gap of p-layer. These results indicate that wide-gap p-μc-Si_(1-x)O_x:H is a promising material for use as window layer in hetero-junction μc-Si:H solar cells.