首页> 外国专利> MASK-LESS PATTERNING OF AMORPHOUS SILICON LAYERS FOR LOW-COST SILICON HETERO-JUNCTION INTERDIGITATED BACK-CONTACT SOLAR CELLS

MASK-LESS PATTERNING OF AMORPHOUS SILICON LAYERS FOR LOW-COST SILICON HETERO-JUNCTION INTERDIGITATED BACK-CONTACT SOLAR CELLS

机译:低成本硅异质结互扩散背接触式太阳能电池非晶硅层的无掩模图案化

摘要

The present invention is in the field of a method for mask-less patterning of amorphous silicon layers, such as for low-cost silicon hetero-junction interdigitated back-contact solar cells, solar-cells and PV-panels obtainable by said method, in particular Silicon-Heterojunction (SHJ) interdigitated back-contacted (IBC) solar cells.
机译:本发明属于一种用于非晶硅层的无掩模图案化的方法的领域,例如用于低成本硅异质结叉指背接触太阳能电池,可通过所述方法获得的太阳能电池和PV面板。特别是硅-异质结(SHJ)叉指背接触(IBC)太阳能电池。

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