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首页> 外文期刊>Current applied physics: the official journal of the Korean Physical Society >The influence of moisture on atmospheric pressure plasma etching of PA6 films
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The influence of moisture on atmospheric pressure plasma etching of PA6 films

机译:水分对PA6膜大气压等离子体刻蚀的影响

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摘要

The moisture in the substrate material may have a potential influence on atmospheric pressure plasma treatment. In order to investigate how the existence of moisture affects atmospheric pressure plasma treatment, polyamide 6 (PA6) films were treated by helium, helium/oxygen (O2) plasmas using atmospheric pressure plasma jet (APPJ) at different moisture regain. The film surfaces were investigated using contact-angle measurements, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) to characterize the surfaces. The exposure of PA6 film surfaces to the plasmas led to the etching process on the surfaces and changes in the topography of the surfaces. It was shown that the etching rate and the surface roughness were higher for the 9.33% moisture regain (relative humidity 100%) group than that of the 1.61% moisture regain (relative humidity 10%) group with the same plasma gas and power.
机译:基板材料中的水分可能会对大气压等离子体处理产生潜在影响。为了研究水分的存在如何影响大气压等离子体处理,使用大气压等离子体射流(APPJ)在不同的回潮率下通过氦,氦/氧(O2)等离子体处理聚酰胺6(PA6)膜。使用接触角测量,原子力显微镜(AFM)和X射线光电子能谱(XPS)研究了薄膜表面,以表征表面。 PA6膜表面暴露于等离子体导致了表面蚀刻过程以及表面形貌的变化。结果表明,在等离子气体和功率相同的情况下,9.33%的回潮率(相对湿度为10%)组的蚀刻速率和表面粗糙度要高于1.61%的回潮率(相对湿度为10%)的蚀刻速率和表面粗糙度。

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