Fabrication technology for silicon nanocrystals

摘要

The fabrication of silicon nanocrystals has become an important semiconductor process technology. This paper describes the formation of nanocrystals on semiconductor substrates using an improved thin-film growth method. This method applies theagglomeration phenomenon, in which the silicon atoms in a thin, amorphous layer migrate and form a hemispherical mass during annealing.Using this technology, we have realized a nanocrystal memory device comprising a charge-storing effect in a nanocrystal.