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Configurable DRAM macro design for 2,112 derivative organizations to be synthesized using memory generator

机译:可配置的DRAM宏观设计用于使用内存发生器合成的2,112个衍生组织

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摘要

One-chip integrated technology for the DRAM and logic circuit is an effective solution for realizing a high-performance system LSI. Toshiba has produced a dRAMASIC{sub}TM, in which a DRAM macro can be embedded in an application-specific IC (ASIC).We have now developed a DRAM macro which is suitable as a memory generator. The memory generator can composite various configurations of embedded DRAM macro in a short turnaround time for the ASIC. The size of the DRAM macro generated by the memorygenerator is comparable to that of a manually designed DRAM. We have fabricated 4 Mbit and 20 Mbit DRAM macros using a memory generator and 0.35μm technology.
机译:DRAM和逻辑电路的单片集成技术是实现高性能系统LSI的有效解决方案。 东芝制作了一个戏剧性{sub} tm,其中DRAM宏可以嵌入在特定于应用程序的IC(ASIC)中.We现在开发了一个适合作为内存发生器的DRAM宏。 存储器发生器可以在ASIC的短周转时间内复制各种嵌入式DRAM宏的配置。 由MemoryGenerator生成的DRAM宏的大小与手动设计的DRAM产生的尺寸相当。 我们使用内存发生器和0.35μm技术制作了4 Mbit和20 Mbit DRAM宏。

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