首页> 外文期刊>東芝レビュー >Configurable DRAM macro design for 2,112 derivative organizations to be synthesized using memory generator
【24h】

Configurable DRAM macro design for 2,112 derivative organizations to be synthesized using memory generator

机译:使用存储器生成器为2,112个衍生组织配置的DRAM宏设计

获取原文
获取原文并翻译 | 示例
           

摘要

One-chip integrated technology for the DRAM and logic circuit is an effective solution for realizing a high-performance system LSI. Toshiba has produced a dRAMASIC{sub}TM, in which a DRAM macro can be embedded in an application-specific IC (ASIC).We have now developed a DRAM macro which is suitable as a memory generator. The memory generator can composite various configurations of embedded DRAM macro in a short turnaround time for the ASIC. The size of the DRAM macro generated by the memorygenerator is comparable to that of a manually designed DRAM. We have fabricated 4 Mbit and 20 Mbit DRAM macros using a memory generator and 0.35μm technology.
机译:DRAM和逻辑电路的单芯片集成技术是实现高性能系统LSI的有效解决方案。东芝生产了一种dRAMASIC {sub} TM,其中可以将DRAM宏嵌入到专用IC(ASIC)中。我们现在已经开发了适合用作存储器发生器的DRAM宏。存储器生成器可以在短时间内为ASIC组合嵌入式DRAM宏的各种配置。由内存生成器生成的DRAM宏的大小与手动设计的DRAM的大小相当。我们使用存储器生成器和0.35μm技术制造了4 Mbit和20 Mbit DRAM宏。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号