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A configurable DRAM macro design for 2112 derivative organizations to be synthesized using a memory generator

机译:使用存储器生成器为2112个衍生组织进行可配置的DRAM宏设计

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This DRAM macro is suitable for a memory generator implementation. The article shows the expandable floor layout scheme (EFLS) of the DRAM macros. A macro architecture that consists of several banks has a disadvantage that the macro size becomes large, because each bank has peripheral circuits for independent operation. The EFLS eliminates this redundancy by sharing the peripheral circuits among the expansion units of the memory array. Two types of floor layouts are supported by EFLS. One is simple I/O type. The other is doubled I/O type. In both of the arrangements, a DRAM macro is formed by combination of 1 Mb memory array segments and peripheral blocks. Each block is manually designed so the macro size is minimized when all the blocks are combined together. Peripheral circuits that can be shared among 1 Mb segments are placed in the peripheral blocks to save the area.
机译:此DRAM宏适用于存储器生成器实现。本文介绍了DRAM宏的可扩展平面布局方案(EFLS)。由多个存储体组成的宏体系结构的缺点是宏大小会变大,因为每个存储体都有用于独立操作的外围电路。 EFLS通过在存储阵列的扩展单元之间共享外围电路来消除这种冗余。 EFLS支持两种类型的地板布局。一种是简单的I / O类型。另一个是I / O类型加倍。在这两种配置中,DRAM宏都是由1 Mb存储阵列段和外围模块的组合形成的。每个块都是手动设计的,因此当所有块组合在一起时,宏的大小会最小化。可以在1 Mb段之间共享的外围电路被放置在外围模块中,以节省面积。

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