Area Selective Molecular Layer Deposition of Polyurea Films

摘要

Patterned organic thin films with submicrometer features are of great importance in applications such as nanoelectronics and optoelectronics. We present here a new approach for creating patterned organic films using area selective molecular layer deposition (MLD). MLD is a technique that allows for conformal deposition of nanoscale organic thin films with exceptional control over vertical thickness and composition. By expanding the technique to allow for area selective MLD, lateral patterning of the film can be achieved. In this work, polyurea thin films were deposited by alternating pulses of 1,4-phenylenediisocyanate (PDIC) and ethylenediamine (ED) in a layer-by-layer fashion with a linear growth rate of 5.3 A/cycle. Studies were carried out to determine whether self-assembled monolayer (SAM) formed from octadecyltrichlorosilane (ODTS) could block MLD on silicon substrates. Results show that the MLD process is impeded by the SAM. To test lateral patterning in MLD, SAMs were patterned onto silicon substrates using two different approaches. In one approach, SiO2-coated Si(lOO) substrates were patterned with an ODTS SAM by soft lithography in a well-controlled environment. In the second approach, patterned ODTS SAM was formed on H-Si/SiO2 patterned wafers by employing the chemically selective adsorption of ODTS on SiO2 over H-Si. Auger electron spectroscopy results revealed that the polyurea film is deposited predominantly on the ODTS-free regions of both patterned substrates, indicating sufficient blocking of MLD by the ODTS SAM layer to replicate the pattern. The method we describe here offers a novel approach for fabricating high quality, three-dimensional organic structures.