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Atomically Thin Group V Elemental Films: Theoretical Investigations of Antimonene Allotropes

机译:V族原子薄元素膜:锑同素异形体的理论研究

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摘要

Group V elemental monolayers including phosphorene are emerging as promising 2D materials with semiconducting electronic properties. Here, we present the results of first-principles calculations on stability, mechanical and electronic properties of 2D antimony (Sb), antimonene. Our calculations show that free-standing alpha and beta allotropes of antimonene are stable and semiconducting. The a-Sb has a puckered structure with two atomic sublayers and beta-Sb has a buckled hexagonal lattice. The calculated Raman spectra and STM images have distinct features thus facilitating characterization of both allotropes. The beta-Sb has nearly isotropic mechanical properties, whereas alpha-Sb shows strongly anisotropic characteristics. An indirect-direct band gap transition is expected with moderate tensile strains applied to the monolayers, which opens up the possibility of their applications in optoelectronics.
机译:包括磷烯在内的V组元素单层正在成为具有半导体电子性能的有前途的2D材料。在这里,我们介绍关于二维锑(Sb),锑的稳定性,机械和电子性能的第一性原理计算结果。我们的计算表明,锑的独立的α和β同素异形体是稳定的并且是半导体。 a-Sb具有两个原子亚层的褶皱结构,β-Sb具有弯曲的六角形晶格。计算得出的拉曼光谱和STM图像具有鲜明的特征,因此有助于表征两种同素异形体。 β-Sb具有几乎各向同性的机械性能,而α-Sb具有很强的各向异性特征。可以在单层上施加适度的拉伸应变,从而实现间接-直接的带隙跃迁,这为它们在光电学中的应用打开了可能性。

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