Enhanced Thermoelectric Properties of Bi_(0.5)Sib_(1.5)Te3 Films by Chemical Vapor Transport Process

摘要

Bi_(0.5)Sib_(1.5)Te3 films were prepared by a novel chemical vapor transport process through delicate controlling the temperature of the substrate and vapor source. The power factor reaches 30 μW cm~(-1) K~(-3) at room temperature, which is much higher than the value of the Bi_(0.5)Sib_(1.5)Te3 films prepared by other techniques. The enhancement of thermoelectric properties might be attributed to the higher carrier mobility (252 cm2 V~(-1) s~(-1)), coming from the effective interparticle contiguity of (00L) oriented nanoplates embedded in the present Bi_(0.5)Sib_(1.5)Te3 films.