机译:便捷的后退火工艺诱导的Bi_(0.5)Sb_(1.5)Te_3薄膜的优先生长转变:具有分层结构的增强的热电性能
Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, School of Materials Science and Engineering, Beihang University, Beijing, 100191, China;
Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, School of Materials Science and Engineering, Beihang University, Beijing, 100191, China;
Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, School of Materials Science and Engineering, Beihang University, Beijing, 100191, China;
Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, School of Materials Science and Engineering, Beihang University, Beijing, 100191, China;
Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, School of Materials Science and Engineering, Beihang University, Beijing, 100191, China;
Thermoelectric properties; Thin films; Sputtering; Bismuth antimony telluride; Preferential growth; Thermoelectric performance;
机译:优先生长Bi_(1.5)Sb_(0.5)Te_3薄膜的多层结构和增强的热电性能
机译:通过闪蒸提高添加Ga的Bi_(0.5)Sb_(1.5)Te_3薄膜的热电性能
机译:通过闪蒸提高添加Ga的Bi_(0.5)Sb_(1.5)Te_3薄膜的热电性能
机译:P型Bi_(0.5)SB_(1.5)TE_3和N型BI_2TE_(2.7)SE_(0.3)薄膜的微观结构和热电性能,由脉冲激光消融沉积
机译:铋基薄膜和多层结构的生长和热电传输特性。
机译:界面电荷缺陷的优先散射增强了几层n型Bi2Te3的热电性能
机译:(Bi_(0.25)Sb_(0.75)_2 Te_3的高热电性能由于能带收敛而产生,并通过载流子浓度控制得到改善