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Enhancement of Light Emission from Silicon by Precisely Tuning Coupled Localized Surface Plasmon Resonance of a Nanostructured Platinum Layer Prepared by Atomic Layer Deposition

机译:通过精确调谐通过原子层沉积制备的纳米结构铂层的耦合局部表面等离子体共振,增强了硅的发光。

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摘要

Plasmonic enhancement of photoluminescence from bulk silicon was achieved by spectrally tailoring coupled localized surface plasmon resonance (LSPR) in the Al2O3 coveranostructured platinum (nano-Pt)/Al2O3 spacer/silicon multilayer structures prepared by atomic layer deposition (ALD). Agreement between the simulation and experimental data indicates that the plasmonic activity originates from absorption enhancement due to coupled LSPR. Because of the optimized dielectric environment deposited by ALD around the nano-Pt layer, absorption of the multilayer structure was enhanced by the precise tuning of coupled LSPR to coincide with the excitation wavelength. This accurate plasmonic multilayer structure grown by ALD with high precision, tunability, uniformity, and reproducibility can be further applied in efficient light-emitting devices.
机译:通过光谱调整Al2O3覆盖层/纳米结构化铂(nano-Pt)/ Al2O3间隔层/通过原子层沉积(ALD)制备的硅多层结构中的耦合局部表面等离子体激元共振(LSPR),可以实现体硅的光致发光增强。模拟和实验数据之间的一致性表明,等离激元活性源自耦合LSPR引起的吸收增强。由于ALD在纳米Pt层周围沉积了优化的介电环境,因此通过精确调谐耦合LSPR以使其与激发波长一致,可以增强多层结构的吸收。通过ALD生长的具有高精度,可调性,均匀性和可再现性的这种精确的等离子多层结构可以进一步应用于高效的发光器件中。

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