Hydrogen addition effect on SiGe growth by ion-beam sputter technique

摘要

Effect of hydrogen on SiGe thin film preparation by ion-beam sputter technique Is discussed. Using this technique well-controlled and reproducible film thickness is obtained. Ge segregates ort tie surface of overlaying Si layer and is mixed with the Si, so that it is impossible to obtain a abrupt Si/Ge heterointerface. This segregation was suppressed effectively by the surfactant effect of introducing hydrogen, however crystailinity of Si was found to degrade.