Epitaxial Growth of SiGe Films Grown by Ion-Beam Sputtering and Generation of Large Thermoelectric Power

摘要

Epitaxial growth of SiGe films using an ion beam sputtering technique is investigated. Radiation effects to a growing film by the sputtering process are significant to the epitaxial growth. Radiation damage is controllable by changing the atomic weight of sputtering gas. Strain of SiGe films is also controllable by changing the acceleration voltage. Thermoelectric properties of the SiGe alloy films with deteriorated crystallinity were investigated and a large thermoelectric power of 1.5mV/K and power factor of 7.1×10{sup}(-2) Wm{sup}(-1)K{sup}(-2) were obtained.