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Fabrication of Cu-O Thin Films by Galvanostatic Electrochemical Deposition from Weakly Acidic Solutions

机译:通过弱酸性溶液通过电镀电化学沉积制备Cu-O薄膜

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Cu-O thin films are deposited at low pH (< 6), low and high temperatures (10°C and 60°C) using the cathodic electrochemical deposition method. The effects of the deposition current densities are studied in a range including current densities high enough to electrolyze water and generate hydrogen bubbles. The influences of deposition variables on film composition, structural, morphological and optical properties are investigated. Auger electron spectroscopy results show fabrication of both Cu_2O and CuO, which is consistent with the results of Raman spectroscopy. X-ray diffraction patterns show (111) and (220) peaks related to Cu_2O for the samples deposited at 60°C, whereas the samples deposited at the low temperature are almost amorphous.
机译:使用阴极电化学沉积方法,在低pH(<6),低温和高温(10℃和60℃)下沉积Cu-O薄膜。 研究沉积电流密度的影响在包括电流密度高于电解水并产生氢气的范围内。 研究了研究沉积变量对薄膜组成,结构,形态学和光学性质的影响。 螺旋钻电子光谱结果表明CU_2O和CUO的制作,这与拉曼光谱的结果一致。 X射线衍射图案显示(111)和(220)与Cu_2O相关的峰,用于在60℃下沉积的样品,而在低温下沉积的样品几乎是无定形的。

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