机译:在SRTIO3基板上直接生长0.67pb(Mg1 / 3nb2 / 3)O-3-0.33的结构特性0.67pb(mg1 / 3nb2 / 3)o-3-0.33薄膜
Jozef Stefan Inst Adv Mat Dept Jamova Cesta 39 Ljubljana 1000 Slovenia;
Jozef Stefan Inst Adv Mat Dept Jamova Cesta 39 Ljubljana 1000 Slovenia;
Jozef Stefan Inst Elect Ceram Dept Jamova Cesta 39 Ljubljana 1000 Slovenia;
Natl Inst Chem Dept Mat Chem Hajdrihova Ul 19 Ljubljana 1000 Slovenia;
Jozef Stefan Inst Dept Nanostruct Mat Jamova Cesta 39 Ljubljana 1000 Slovenia;
Natl Taiwan Univ Dept Engn Sci &
Ocean Engn Taipei 10617 Taiwan;
Jozef Stefan Inst Adv Mat Dept Jamova Cesta 39 Ljubljana 1000 Slovenia;
Pulsed-laser deposition; PMN-PT; Crystal structure; Piezoelectric thin films; Pb-loss compensation;
机译:在SRTIO3基板上直接生长0.67pb(Mg1 / 3nb2 / 3)O-3-0.33的结构特性0.67pb(mg1 / 3nb2 / 3)o-3-0.33薄膜
机译:制备条件对(001)SrTiO3上外延(PbMg1 / 3Nb2 / 3O3)0.67-(PbTiO3)0.33薄膜的相形成和性能的影响
机译:在Pb(Mg1 / 3Nb2 / 3)O3-PbTiO3上外延生长的NiFe2O4薄膜的剩磁的电场控制
机译:在错切的SrTiO3衬底上外延生长的钙钛矿PbTiO3薄膜的分步生长
机译:关于(Pb(Mg1 / 3Nb2 / 3)O3)0.65-(PbTiO3)0.35(PMN-PT)压电板传感器(PEPS)的结合应力增强的灵敏度。
机译:(111)取向Pb(Mg1 / 3NB2 / 3)O3-PBZRO3-PBTIO3薄膜的结构和电性能用于高频换能器应用
机译:单畴0.67Pb(Mg1 / 3Nb2 / 3)O-3-0.33 PbTiO3单晶薄膜的机电耦合系数
机译:在srTiO3基底上生长BaZrO3纳米棒的YBa2Cu3O7-x薄膜的微观结构表征(后印刷)