Static performance model of GaN MESFET based on the interface state

摘要

This paper presents a new model to study the static performances of a GaN metal epitaxial-semiconductor field effect transistor (MESFET) based on the metal-semiconductor interface state of the Schottky junction. The I-V performances of MESFET under different channel lengths and different operating systems (pinch-off or not) have been achieved by our model, which strictly depended on the electrical parameters, such as the drain-gate capacity C_(gd), the source-gate capacity C_(gs), the transconductance, and the conductance. To determine the accuracy of our model, root-mean-square (RMS) errors were calculated. In the experiment, the experimental data agree with our model. Also, the minimum value of the electrical parameter has been calculated to get the maximum cut-off frequency for the GaN MESFET.