Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures

D. L. Alfimova; L. S. Lunin; M. L. Lunina; A. S. Pashchenko; S. N. Chebotarev; A. E. Kazakova; D. A. Arustamyan

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Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures

机译：调查薄膜inalgapas / Gaas异质结构的结构完美

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The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/GaAs heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.

机译：讨论了生长条件对薄膜含量/ GaAs异质结构的结构完美的影响。主要确定的生长参数是生长温度及其梯度，液区厚度，晶格参数与层和基板的热膨胀系数之间的匹配，以及基板中的位错密度。

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来源
《Journal of surface investigation: x-ray, synchrotron and neutron techniques》 |2018年第3期|共7页
作者
D. L. Alfimova; L. S. Lunin; M. L. Lunina; A. S. Pashchenko; S. N. Chebotarev; A. E. Kazakova; D. A. Arustamyan;
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作者单位

Southern Scientific Center Russian Academy of Sciences;

Southern Scientific Center Russian Academy of Sciences;

Southern Scientific Center Russian Academy of Sciences;

Southern Scientific Center Russian Academy of Sciences;

Southern Scientific Center Russian Academy of Sciences;

Platov South-Russian State Polytechnic University (NPI);

Platov South-Russian State Polytechnic University (NPI);

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原文格式 PDF
正文语种 eng
中图分类原子核物理学、高能物理学;
关键词
InAlGaPAs/GaAs heterostructures; floating-zone refining in a temperature-gradient field; elastic stresses; thermal expansion coefficient; diffraction reflection curve;

机译：inalgapas / gaas异质结构;浮区精制在温度梯度场中;弹性应力;热膨胀系数;衍射反射曲线;

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1. Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures [J] . D. L. Alfimova, L. S. Lunin, M. L. Lunina, Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2018,第3期

机译：调查薄膜inalgapas / Gaas异质结构的结构完美
2. Thin-film wafer fusion fabrication technology for buried heterostructure InGaAsP/lnP lasers on GaAs [J] . Ohiso Y., Iga R. Electronics Letters . 1999,第22期

机译：GaAs掩埋异质结构InGaAsP / InP激光器的薄膜晶圆融合制造技术
3. Structural and optical investigations of Al_xGa _(1-x)As:Si/GaAs(1 0 0) MOCVD heterostructures [J] . Seredin P.V., Glotov A.V., Domashevskaya E.P., Physica, B. Condensed Matter . 2010,第22期

机译：Al_xGa _（1-x）As：Si / GaAs（1 0 0）MOCVD异质结构的结构和光学研究
4. On the correlation of the structural perfection and nonequilibrium carrier parameters in 3C SiC heterostructures [C] . A. Kadys, P. Scajev, G. Manolis, Silicon carbide and related materials 2009 . 2010

机译：3C SiC异质结构的结构完善性与非平衡载流子参数的相关性
5. Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices. [D] . Grant, Perry C. 2013

机译：快速热退火对MBE生长的光电器件GaAsBi / GaAs异质结构影响的研究。
6. Electrical Transition in Isostructural VO2 Thin-Film Heterostructures [O] . Adele Moatti, Ritesh Sachan, Valentino R Cooper, -1

机译：等结构VO2薄膜异质结构中的电跃迁
7. Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures [O] . Frabboni, Stefano, Grillo, Vincenzo, Gazzadi, Gian Carlo, 2014

机译：晶格失配的收敛束电子衍射研究 Gaas / Gaas1-xNx嵌入Gaas / Gaas1-xNx：H中的静电无序异质

Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures

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