Effect of electron radiation on electrical parameters of Zn/n-Si/Au-Sb and Zn/ZnO/n-Si/Au-Sb diodes

摘要

In this study, RF-magnetron sputtered ZnO thin film as an interlayer was used to improve radiation tolerance of the Schottky diodes. The structural and optical measurements showed that the ZnO thin films have hexagonal crystal structure with preferential c-axis orientation, 20.39nm grain sizes and 3.15eV bandgap. The electrical parameters such as ideality factor, barrier height and series resistance of Zn/n-Si/Au-Sb and Zn/ZnO/n-Si/Au-Sb diodes were calculated before and after electron radiation at 25, 50 and 75 gray doses. Deviation values of the parameters showed that the ZnO as an interlayer caused to improved radiation tolerance of the diodes.