Nano-structure solar cells on the base of p-Si/Cd1-xZnxO thin film heterojunctions

摘要

In this paper heterojunctions of p-Si/Cd1-xZnxO were deposited by the method of electrochemical deposition. The electric and photoelectrical properties of p-Si/Cd1-xZnxO heterojunctions, surface morphology and optical properties of Cd1-xZnxO films were investigated depending on the electrochemical deposition potential and films composition. It is found out that heterojunctions of p-Si/Cd1-xZnxO with nano-structured surface, which deposited at cathode potential of -1.2 V, shows good rectification (k approximate to 640). Under AM1.5 conditions (W = 100 mW/cm(2)) the maximal values of open-circuit voltage, short-circuit current, fill factor and efficiency of our best nano-structured cell, were U-oc = 442 mV, J(sc) = 12.9 mA/cm(2), FF = 0.57 and eta = 3.25 %, respectively.