LPCVD AGAINST PECVD FOR MICROMECHANICAL APPLICATIONS

摘要

After discussion of the basic aspects of CVD and its reaction kinetics LPCVD and PECVD will evolve as techniques commonly used at high temperature (>500 degrees C) and lower temperature (<500 degrees C), respectively. Films deposited by these two techniques differ in several aspects, i.e., thickness, uniformity, purity, density, electrical properties, adhesion, step coverage, etc. Reactor designs are discussed in brief for optimization of the process parameters to yield optimized film properties. Then each of the major film materials such as polysilicon, SiN, SiO2, SiOxNyHz, SiC and some exotics such as diamond films are discussed with respect to their application in microstructures and their film properties in dependence on the deposition technique and follow-on processing, e.g., internal stresses due to imperfection in structure and composition or clamping, film density, pinhole density, and etchability. The discussion then moves to the application of LPCVD and PECVD in microstructures. A few typical examples will be presented for functional layers: films for membranes, cantilevers, etc in mono- and heterostructures, or ion sensitive films including passivation films as used in many sensors (e.g., microphones) and actuators (e.g., micromotors), especially such as fabricated by surface micromachining. Some room is also given to SIG, a new micromechanical material. A summary and weighting of the two CVD techniques is given. [References: 70]