Detailed Modeling of Chemistry and Transport Phenomena in CVD Reactors.Application to Tungsten LPCVD (Gedetailleerde Modellering van Chemie en Transportverschijnselen in CVD Reactoren. Toepassing op Wolfraam LPCVD)

摘要

In modeling Chemical Vapor Deposition (CVD) processes, the detailed descriptionof the chemical processes that lead to the deposition of a solid film, in combination with the three-dimensional description of the transport of gaseous reactants through the reactor, often forms a delicate problem. On the one hand sufficiently detailed and reliable chemistry models are generally lacking, while on the other hand the required numerical methods are not available. In this thesis, a numerical model for transport phenomena and chemical processes in CVD reactors is described. This model, which was developed in the ESPRIT project ACCESS-CVD, has resulted in the computational fluid dynamics code PHOENICS-CVD, a special version of the CFD-package PHOENICS for the simulation of CVD processes. In this code, the transport properties of the process gases are predicted from kinetic gas theory.