Temperature-induced transport changes in molecular junctions based on a spin crossover complex

摘要

This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2B(pz)(2))(2)(phen)] as an active switchable thin film. In these junctions we observed that the spin state conversion causes a gradual increase in the current density, which may be due to a crossover from direct tunneling to multi-step hopping.