Fabrication and characterization of ReO3-type dielectric films

摘要

ReO3-type NbO2F and TaO2F thin films were synthesized using HF vapor oxidation during hydrothermal treatment and their dielectric properties were investigated. It was confirmed for the first time that these ReO3-type oxyfluoride thin films can function as dielectric materials, as demonstrated both theoretically and experimentally. NbO2F and TaO2F thin films exhibited relatively high dielectric constants of 80 and 60 at 1 MHz, respectively. This new ReO3-type family of films is promising for the preparation of dielectric materials that can be utilized for improving electronic components. Moreover, our results provide a new strategy to improve dielectric constants without reducing bandgap energy.