Fabrication of semiconductor device by depositing first interlayer dielectric film on semiconductor wafer, partially removing the first film and depositing second interlayer dielectric film on the first film

摘要

A semiconductor device is made by: (a) depositing a first interlayer dielectric film on a semiconductor wafer with an isolation insulating film and gates; (b) performing a sputtering etch entirely on a surface of the first dielectric film; (c) partially removing the first dielectric film through isotropic etching; and (d) depositing a second interlayer dielectric film on the first dielectric film. Fabrication of a semiconductor device includes; (a) forming an isolation insulating film on a semiconductor wafer and forming gates separated by gaps of a predetermined distance on an active region; (b) depositing a first interlayer dielectric film having a predetermined thickness on the wafer with the gates (120), so that the gaps between the gates are not completely filled; (c) performing a sputtering etch entirely on a surface of the first dielectric film; (d) partially removing the first dielectric film through isotropic etching; and (e) depositing a second interlayer dielectric film on the first dielectric film, so that the gaps between the gates are completely filled.