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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Negative and near-zero Poisson's ratios in 2D graphene/MoS2 and graphene/h-BN heterostructures
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Negative and near-zero Poisson's ratios in 2D graphene/MoS2 and graphene/h-BN heterostructures

机译:2D石墨烯/ MOS2和石墨烯/ H-BN异质结构中的负和接近零泊松比率

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摘要

Negative and near-zero Poisson's ratio materials are mechanical metamaterials that host an improved strain energy absorption property with respect to conventional materials. By using first-principles calculations, we report the negative and near-zero Poisson's ratios in van der Waals (vdW) heterostructures, such as graphene/hexagonal molybdenum disulfide (G/MoS2) and graphene/hexagonal boron nitride (G/h-BN), sharing distinct crystal structures from all other known negative and near-zero Poisson's ratio materials. However, the Poisson's ratios of the interfacial layer in bilayer MoS2 and h-BN are positive and near-zero along the out-of-plane direction, respectively, which are quite different from the Poisson's ratios of G/MoS2 and G/h-BN heterostructures. Therefore, these behaviors are unique to vdW heterostructures. We attribute these negative Poisson's ratio behaviors to the special interaction of p(z) orbitals between the interfacial layers. Furthermore, we observed among them high-order elastic constants in the out-of-plane direction, which exhibit nonlinear stress-strain responses. These results are significant for the preparation of G/h-BN and G/MoS2 heterostructures. The combinations of tunable negative/near-zero Poisson's ratios with the excellent electrical/optical properties of G/MoS2 and G/h-BN heterostructures will pave the way to a wide range of applications in novel auxetic molecular sieves and electrodes.
机译:负和近零泊松的比例是机械超材料,其相对于常规材料托管改进的应变能量吸收性能。通过使用第一原理计算,我们在van der waals(Vdw)异质结构中报告了负和接近零泊松的比例,例如石墨烯/六方钼二硫化物(g / mos2)和石墨烯/六边形硼氮化物(g / h-bn ),分享来自所有其他已知的负和接近零泊松材料的不同晶体结构。然而,双层MOS2和H-BN中的界面层的倾斜比率分别是沿着平面外方向的正和接近零,这与G / MOS2和G / H-的泊松比与泊松比不同BN异质结构。因此,这些行为对于VDW异质结构是独一无二的。我们将这些负泊松的比率行为归因于界面层之间P(Z)轨道的特殊相互作用。此外,我们观察到在平面外方向上的高阶弹性常数,其表现出非线性应力 - 应变反应。这些结果对于制备G / H-BN和G / MOS2异质结构是显着的。可调谐负/近零泊松比率具有优异的G / MOS2和G / H-BN异质结构的电气/光学性质的比例将为新颖的辅助分子筛和电极中的各种应用铺平。

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