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机译:具有AL-掺杂ZRHFO_2栅极电介质CNT场效应晶体管装置的低功率开关特性
Department of Advanced Material Engineering Chungbuk National University Chungbuk 28644 Republic of Korea;
Department of Electronic Material Engineering Korea Maritime and Ocean University Busan 49112 Republic of Korea;
Department of Advanced Material Engineering Chungbuk National University Chungbuk 28644 Republic of Korea;
Department of Electronic Material Engineering Korea Maritime and Ocean University Busan 49112 Republic of Korea;
Center for Research Instruments and Experimental Facilities Chungbuk National University Chungbuk 28644 Republic of Korea;
Surface Technology Division Korea Institute of Materials Science (KIMS) Gyeongnam 51508 Republic of Korea;
Department of Electronic Material Engineering Korea Maritime and Ocean University Busan 49112 Republic of Korea;
Department of Advanced Material Engineering Chungbuk National University Chungbuk 28644 Republic of Korea;
Characteristics; Transistor; Dielectric;
机译:具有AL-掺杂ZRHFO_2栅极电介质CNT场效应晶体管装置的低功率开关特性
机译:低温水热合成Al掺杂ZnO纳米结构的扩展栅场效应晶体管的pH传感特性
机译:通过控制Al_2O_3扩散退火工艺来改善Al_2O_3-封端的HfO_2介电层对TiN栅极p型金属-绝缘体-半导体场效应晶体管的器件特性的影响
机译:非平面,多栅极InGaAs量子阱场效应晶体管,具有高K栅极电介质和超规模的栅-漏/栅-源隔离,适用于低功耗逻辑应用
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:用于低功率应用的陡峭开关设备:负差分电容/电阻场效应晶体管
机译:校正:具有不同低/高k EOT比率的杂栅介质隧道场效应晶体管的装置物理与设计
机译:使用碳纳米管场效应晶体管(CNT-FET)开发超灵敏纳米级生物传感器器件