Comparative Analysis of On-Chip Optical and Copper VLSI Interconnects for Deep Sub-Micron Technology Nodes

摘要

This paper presents the comparative analysis of optical and copper interconnects in terms of propagation delay, power dissipation and power delay product (PDP) for global level interconnect at deep submicron technology nodes. With scaled down technology nodes, the cross-sectional dimensions of on-chip devices and interconnects have also been shrinking. Copper as interconnects material will not be able to fulfil the Integrated Circuit (IC) design requirements. Therefore, optical interconnects can be considered as an alternative compared to copper interconnects at nano-scaled technology nodes. The performance in terms of propagation delay, power dissipation and power delay product (PDP) for optical and copper interconnects is evaluated using SPICE simulation tools for different technology nodes at 1 cm interconnect length. It is revealed from results that performance of optical interconnect in all aspects under consideration, is better as compared to conventional copper interconnects for future integrated circuit (IC) design at deep submicron technology nodes.