首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >Influence of the N2O Plasma Treated ZnO Seed Crystallites on Opto-Electrical Properties of Hydrothermally Grown ZnO Nanorods on Plastic Substrate
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Influence of the N2O Plasma Treated ZnO Seed Crystallites on Opto-Electrical Properties of Hydrothermally Grown ZnO Nanorods on Plastic Substrate

机译:N2O等离子体处理的ZnO晶体晶体对塑料基材上水热生长ZnO纳米棒光学性能的影响

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摘要

ZnO nanorods (NRs) based flexible ultraviolet (UV) light detectors have promising applications for wearable and implantable health monitoring systems. However, their responsivity strongly depends on the crystalline quality of the NRs. Here, we propose N2O plasma treatment of the ZnO seed layer (SL) for the growth of high crystalline quality ZnO NRs on flexible polyethylene terephthalate (PET) substrates. In fact, the seed layer prepared at low temperatures, as required by flexible substrates, using sol-gel method contains acetates that result into small grain size of the seed crystallites. However, the N2O plasma treatment of the seed layer removes the acetates thereby providing better nucleation sites for subsequent growth of ZnO NRs due to an increased crystallites grain size. The full width at half maximum (FWHM) of (002) X-ray diffraction peak is decreased from 0.34 in the untreated seed layer based NRs to 0.29 in the plasma treated seed layer based NRs. Besides, improved near band edge emission (NBE) at 374 nm and aspect ratio of similar to 9.2 was demonstrated. UV detector based on the as-grown NRs showed similar to 4 times improvement in the on-off current ratio and similar to 30% decrease in the response and recovery times than the NRs grown on an untreated seed layer.
机译:ZnO纳米棒(NRS)的柔性紫外线(UV)光检测器对可穿戴和可植入的健康监测系统具有很有希望的应用。然而,它们的反应性强烈取决于NRS的晶体质量。这里,我们提出了对柔性聚对苯二甲酸乙二醇酯(PET)底物上的高结晶ZnO NRS生长的ZnO种子层(SL)的N2O等离子体处理。实际上,使用溶胶方法的柔性基材所需的低温在低温下制备的种子层含有乙酸盐,其导致晶粒细晶的小晶粒尺寸。然而,种子层的N2O等离子体处理除去乙酸盐,从而提供更好的成核位点,以随后由于晶粒粒度增加而随后生长ZnO NRS。 (002)X射线衍射峰的半最大(FWHM)的全宽度在基于等离子体处理的种子层的NRS中从未治疗的种子层的NRS中的0.34减少到0.29。此外,对374nm的改善了近频带边缘发射(NBE)和类似于9.2的宽高比。基于生长的NRS的UV检测器显示出导通电流比的4倍,并且与在未处理的种子层上生长的NRS相似的响应和恢复时间的减少30%。

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