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Fabrication of Flexible Superconducting Wiring with High Current-Carrying Capacity Indium Interconnects

机译:具有高电流承载能力铟互连的柔性超导布线的制造

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The X-ray integral field unit (X-IFU) is a cryogenic spectrometer for the Advanced Telescope for High ENergy Astrophysics (ATHENA). ATHENA is a planned next-generation space-based X-ray observatory with capabilities that surpass the spectral resolution of prior missions. Proposed device designs contain up to 3840 transition edge sensors, each acting as an individual pixel on the detector, presenting a unique challenge for wiring superconducting leads in the focal plane assembly. In prototypes that require direct wiring, the edges of X-IFU focal plane have hosted aluminum wirebonding pads; however, indium (In) ‘bumps’ deposited on an interface layer such as molybdenum nitride (MoN) can instead be used as an array of superconducting interconnects. We investigated bumped MoN:In structures with different process cleans and layer thicknesses. Measurements of the resistive transitions showed variation of transition temperature T ~(c)as a function of bias and generally differed from the expected bulk T ~(c)of In (3.41?K). Observed resistance of the In bump structures at temperatures below the MoN transition (at 8.0?K) also depended on the varied parameters. For our proposed X-IFU geometry (10?μm of In mated to a 1-μm In bump), we measured a minimum T ~(c)of 3.14?K at a bias current of 3?mA and a normal resistance of 0.59?mΩ per interconnect. We also investigated the design and fabrication of superconducting niobium (Nb) microstrip atop flexible polyimide. We present a process for integrating In bumps with the flexible Nb leads to enable high-density wiring for the ATHENA X-IFU focal plane.
机译:X射线积分场单元(X-IFU)是用于高能量天体物理学(ATHENA)的高级望远镜的低温光谱仪。 Athena是一个计划的下一代空间的X射线天文台,具有超越先前特派团的光谱分辨率的能力。所提出的装置设计包含多达3840的过渡边缘传感器,每个过渡沿传感器作为检测器上的单独像素,呈现焦平面组件中的布线超导引线的独特挑战。在需要直接布线的原型中,X-IFU焦平面的边缘具有托管铝线桥接垫;然而,沉积在界面层上的铟(In)'凸块,例如氮化物(MON)可以用作超导互连阵列。我们调查了撞击Mon:在具有不同工艺的结构中清洁和层厚度。电阻转变的测量显示转变温度T〜(C)的变化作为偏压的函数,并且通常与(3.41Ωk)的预期散装T〜(c)不同。观察到在MON转变的温度下的凸块结构的抗性(在8.0Ωk)上也取决于各种参数。对于我们所提出的X-IFU几何形状(10?μm在凸块中配合到1μm),我们在3Ωma的偏置电流下测量为3.14Ω·k的最小T〜(c),常规电阻为0.59 ?每个互连MΩ。我们还研究了柔性聚酰亚胺上的超导铌(Nb)微带的设计和制造。我们介绍了一种与柔性NB的凸块集成的过程,导致雅典娜X-IFU焦平面的高密度布线。

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