Precise method for determining avalanche breakdown voltage of silicon photomultipliers

摘要

A physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDErel) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p - n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE_(rel) value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts.