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Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability

机译：通过使用偏置依赖性击穿概率定位雪崩结构和硅光电倍增器中的击穿产生电荷载波的起源

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Adam Nepomuk Otte; Thanh Nguyen; Joel Stansbury;
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1. Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability [J] . Otte Adam Nepomuk, Thanh Nguyen, Stansbury Joel Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2019,第FEBa1期

机译：通过使用偏置相关的击穿概率来定位硅光电倍增管中的雪崩结构和击穿产生电荷载流子的起源
2. Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability time to avalanche breakdown and jitter [J] . Denis Dolgos, Hektor Meier, Andreas Schenk, Journal of Applied Physics . 2011,第8期

机译：单光子雪崩二极管中高能载流子传输的全频带蒙特卡罗模拟：计算雪崩击穿和抖动的击穿概率时间
3. Precise method for determining avalanche breakdown voltage of silicon photomultipliers [J] . I. Chirikov-Zorin Journal of instrumentation: an IOP and SISSA journal . 2017,第7期

机译：确定硅光倍增器的雪崩击穿电压的精确方法
4. A NOVEL ORIGIN OF AVALANCHE BREAKDOWN IN MULTICRYSTALLINE SILICON SOLAR CELLS [C] . Jan Bauer, Dominik Lausch, Horst Blumtritt, European Photovoltaic Solar Energy Conference and Exhibition . 2012

机译：多晶硅太阳能电池中雪崩击穿的新起源
5. Avalanche breakdown and microplasma noise in space-charge-limited anthracene diode [D] . Yau, Donald K.M -1

机译：空间电荷受限的蒽二极管中的雪崩击穿和微等离子体噪声
6. Topological Features of Hot Carrier Induced Anisotropic Breakdown on Silicon Diode Surfaces [O] . George G. Harman 1969

机译：硅二极管表面热载流子各向异性击穿的拓扑特征
7. Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes [O] . Petticrew J.D., Dimler S.J., Zhou X., 2017

机译：硅单光子雪崩二极管的雪崩击穿时序统计
8. Origins of Interface States and Oxide Charges Generated by Ionizing Radiation in Metal-Oxide-Silicon Structures. [R] . sah, c. t. sah, l. c. 1976

机译：金属氧化物 - 硅结构中电离辐射产生界面态和氧化物电荷的起源。

Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability

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