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Optimization of ZnO/Ag/ZnO Transparent Conductive Electrodes Fabricated by Magnetron Sputtering

机译:磁控溅射制造的ZnO / Ag / ZnO透明导电电极的优化

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摘要

The critical role of the thicknesses of the top and bottom oxide layers, as well as Ag layer, in ZnO/ Ag/ZnO transparent conductive electrodes were investigated. The Ag forms a nearly continuous layer at the thickness of 8 nm, at which the Ag sheet resistance of 8.0 Omega/Sq. is lower than the typical criteria of 10 Omega/Sq. By making independent changes in the thickness of the top and bottom ZnO layers, which serve as antireflection layers, it was found that the top ZnO layer thickness has a dominant impact, with the bottom ZnO layer thickness contributing a less but still significant amount. The optimized thicknesses for the top and bottom ZnO layers were found to be 40 and 20-30 nm, respectively, resulting in a peak transmittance of 97.1% and average visible light transmittance of 90.8%. According to the Haccke figure of merit (phi(H )= T-ava(10)/R-s), the value for the optimized ZnO/Ag/ZnO electrode was 0.048, which is highly competitive for transparent conductive electrodes for future optoelectronic devices.
机译:研究了顶部和底部氧化物层的厚度以及ZnO / Ag / ZnO透明导电电极厚度的厚度的关键作用。 Ag形成厚度为8nm的几乎连续的层,在8nm的厚度为8.0ω/ sq。低于10 omega / SQ的典型标准。通过使顶层和底层层的厚度的独立变化,它用作抗反射层,发现顶部ZnO层厚度具有显性撞击,底部ZnO层厚度有助于较少但仍有显着的量。发现顶部和底部ZnO层的优化厚度分别为40和20-30nm,导致峰透射率为97.1%,平均可见光透射率为90.8%。根据HACCKE的优点(PHI(H)= T-AVA(10)/ R-S),优化的ZnO / Ag / ZnO电极的值为0.048,对于未来光电器件的透明导电电极具有竞争力。

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