On Approach of Optimization of Manufacturing of Memory Cells Based on Field-Effect Heterotransistors to Increase Their Density

摘要

In this paper we introduce an approach to increase density of field-effect transistors framework a memory cells presented as a flip-flop circuit. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements will be decreased due to manufactureheterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.