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首页> 外文期刊>AIChE Journal >Particle-in-Cell Simulation of Electron and Ion Energy Distributions in dc/rf Hybrid Capacitively-Coupled Plasmas
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Particle-in-Cell Simulation of Electron and Ion Energy Distributions in dc/rf Hybrid Capacitively-Coupled Plasmas

机译:dc / rf混合电容耦合等离子体中电子和离子能量分布的粒子模拟

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A Particle-in-Cell simulation with Monte Carlo collisions was used to study electron and ion energy distributions (IEDs) in low-pressure (2.67 Pa) direct-current (dc)/radio-frequency (rf) hybrid capacitively-coupled Ar plasmas. One electrode (dc/rf electrode) of the parallel plate diode was powered by a 13.56 MHz source, and a negative dc bias voltage, whereas the opposite (substrate) electrode was grounded. Secondary electrons emitted from the dc/rf electrode accelerated in the adjacent sheath and entered the plasma, yielding a high-energy tail of the electron energy distribution. For given dc bias voltage, the plasma density increased as the secondary electron emission yield due to ion bombardment increased. A fraction of the secondary electrons were energetic enough to overcome the sheath potential barrier on the substrate electrode and bombard the substrate. The electron angular distribution on the substrate electrode had a peak of directional electrons superimposed on a typical cosine distribution. The mean energy and angular spread of directional electrons could be controlled by varying the dc bias voltage. However, as the dc bias became more negative, the dc/rf sheath expanded at the expense of the bulk plasma, reducing the plasma density, in agreement with published data. The 1ED on the substrate electrode exhibited a dominant bimodal feature with multiple shoulder peaks due to ion-neutral charge exchange collisions. The average ion energy decreased as the dc voltage became more negative, also in agreement with data. Pulsing the plasma power enhanced the tail of the electron energy distribution in the early activeglow (power ON), and yielded a distinct ballistic electron flux on the substrate with energy equal to the applied dc bias.
机译:使用具有蒙特卡洛碰撞的粒子模拟,研究了低压(2.67 Pa)直流(dc)/射频(rf)混合电容耦合Ar等离子体中的电子和离子能量分布(IED) 。平行平板二极管的一个电极(dc / rf电极)由13.56 MHz的电源和负dc偏置电压供电,而相对的(基板)电极接地。从dc / rf电极发射的二次电子在相邻的鞘中加速并进入等离子体,从而产生电子能量分布的高能尾部。对于给定的直流偏置电压,由于离子轰击导致二次电子发射量的增加,等离子体密度增加。一小部分二次电子的能量足以克服衬底电极上的鞘层势垒并轰击衬底。衬底电极上的电子角分布具有定向电子的峰值,该峰值叠加在典型的余弦分布上。定向电子的平均能量和角展度可以通过改变直流偏置电压来控制。但是,随着直流偏置变得越来越负,直流/射频护套以牺牲整体等离子体为代价而膨胀,从而降低了等离子体密度,这与已公布的数据一致。由于离子-中性电荷交换碰撞,基片电极上的1ED表现出主要的双峰特征,具有多个肩峰。直流电压变得越来越负时,平均离子能量也会降低,这也与数据一致。脉冲等离子功率增强了早期活动辉光(电源接通)中电子能量分布的尾部,并在基板上产生了与施加的直流偏置相等的能量的独特弹道电子通量。

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