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The effects of deposition parameters on the grain morphology and wear mechanism of monolayer diamond grinding tools fabricated by hot filament CVD method

机译:沉积参数对热长丝CVD方法制造的单层金刚石研磨工具晶粒形态和磨损机理的影响

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摘要

The hot filament chemical vapor deposition technique (HFCVD) is used to fabricate monolayer grinding tools with high quality diamond abrasive grains. The high pressure and high temperature (HPHT) diamond seeds are distributed on SiC substrate randomly by a spin coater machine. Then epitaxial growth of CVD diamonds is conducted on both seeds and substrate simultaneously. The heteroepitaxial diamond film on substrate serves as a bonding layer to anchor the seeds, and the homoepitaxial growth of the seeds leads to changes in their morphology, purity, as well as mechanical properties. The grown seeds can be used as abrasive grains of the grinding tools. In this work, a systematic study is presented into the effects of deposition parameters (substrate temperature, carbon concentration, reactive pressure, bias current) on the growth behavior of diamond seeds. As a result, it is found that the well-faceted single crystal diamond (SCD) grains can be grown at 800 degrees C, 4.5 KPa, carbon concentration of 1.5% and bias current of 2 A. Besides, the increase of temperature and decrease of pressure allow the changes from SCD grains to microcrystalline diamond (MCD) clusters or further, to nano crystalline diamond (NCD) clusters, while the high bias current and carbon concentration promote the growth of dislocated planes and secondary nucleation. Moreover, it is found that the protrusion of the diamond abrasives can be controlled by the difference in growth rates between seeds and diamond bonding films under various conditions. Finally, the wear resistance of diamond grains is tested. Results show that the wear of SCD grains is dominated by a high rate of wear flat and few fractures, and the wear of MCD grains exhibits less wear flat but more fractures, while the NCD grains exhibit the worst wear resistance in terms of both fracture and wear flat.
机译:热灯丝化学气相沉积技术(HFCVD)用于制造具有优质金刚石磨粒的单层研磨工具。高压和高温(HPHT)金刚石种子通过旋转涂布机随机地分布在SiC衬底上。然后同时在两种种子和基质上进行CVD金刚石的外延生长。基板上的异质轴金刚石膜用作锚定层以锚定种子,种子的同性端生长导致它们的形态,纯度以及机械性能变化。生长的种子可用作研磨工具的磨粒。在这项工作中,介绍了沉积参数(衬底温度,碳浓度,反应压力,偏置电流)对金刚石种子生长行为的影响的系统研究。结果,发现尖锐的单晶金刚石(SCD)晶粒可以在800℃,4.5kPa,碳浓度为1.5%和2A的偏置电流。此外,温度的增加和降低压力允许从SCD谷物到微晶金刚石(MCD)簇的变化或进一步,纳米结晶金刚石(NCD)簇,而高偏置电流和碳浓度促进了脱位的平面和次生成核的生长。此外,发现金刚石磨料的突出物可以通过在各种条件下的种子和金刚石粘合膜之间的生长速率差异来控制。最后,测试了金刚石晶粒的耐磨性。结果表明,SCD谷物的磨损以高磨损率平坦且少量裂缝为主,而MCD晶粒的磨损较少,较少的耐磨性但更多的骨折,而NCD晶粒在骨折方面表现出最差的耐磨性。穿平。

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