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首页> 外文期刊>Diamond and Related Materials >New set up for diamond coatings deposition in AC glow discharge plasma on WC-Co milling cutters of complex shape
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New set up for diamond coatings deposition in AC glow discharge plasma on WC-Co milling cutters of complex shape

机译:复杂形状WC-CO铣刀中AC辉光放电等离子体中的新设施。

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In the current work, we developed a new type of CVD reactor for high-speed deposition of uniform diamond coatings on WC-Co milling cutters in AC glow discharge plasma with two plasma channels in the Ar/H-2/CH4 atmosphere. This CVD system successfully allowed one to deposit well-adherent MCD, UNCD and Multilayer diamond coatings with a thickness up to 60 gm on WC-Co milling cutters of various geometries and with a diameter up to 14 mm. We found that to minimize the edge effect, the optimal energy input for each plasma cord should be set in the range of 1.4-2.5 kW. We also found that diluting the H-2/CH4 atmosphere with argon in the range of 45-80% vol. is one of the necessary conditions to control the deposition process. Diamond deposition rate has been achieved up to 2.5-3 mu m/h with a uniformity of deposition over 50% from maximum thickness. Presented CVD system is very promising due to sufficiently high deposition rate and ease of implementation, and it also has great potential for industrial scaling.
机译:在目前的工作中,我们开发了一种新型的CVD反应器,用于在AR / H-2 / CH4气氛中具有两个等离子体通道的WC-CO铣刀上的均匀金刚石涂层的高速沉积。该CVD系统成功地允许沉积粘附的MCD,UND和多层金刚石涂层,其厚度高达60克的各种几何形状的WC-CO铣刀,直径可达14毫米。我们发现,为了最小化边缘效应,每个等离子体帘线的最佳能量输入应设定在1.4-2.5 kW的范围内。我们还发现,在45-80%Vol的范围内稀释H-2 / CH4气氛。是控制沉积过程的必要条件之一。金刚石沉积速率已达到2.5-3μm/ h,均匀沉积,最大厚度为50%以上。由于足够高的沉积速率和易于实施,所提出的CVD系统非常有前途,并且它也具有巨大的工业缩放潜力。

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