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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Consequences of phase separation on magnetotransport in dc magnetron sputtered Sm0.50Sr0.50MnO3 thin films on LSAT substrate
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Consequences of phase separation on magnetotransport in dc magnetron sputtered Sm0.50Sr0.50MnO3 thin films on LSAT substrate

机译:直流磁控溅射SM0.50SR0.50mNO3薄膜在LSAT底物上分离对磁传输的后果

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摘要

Single crystalline thin films of Sm0.50Sr0.50MnO3 (SSMO) (thickness similar to 200 nm) were prepared on LSAT (100) single crystal substrates by dc magnetron sputtering. The X-ray diffraction theta-2 theta and omega-2 theta scan reveals that these films (i) have very good crystallinity, (ii) are oriented along out-of-plane c-direction, and (iii) are under small tensile strain. Temperature and magnetic field dependent electrical transport of these films shows (i) sharp paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition, (ii) large enhancement in TIM when subjected to magnetic field, (iii) hysteretic variation in resistivity with magnetic field, and (iv) huge occurrence of magnetoresistance near PMI-FMM transition. The magnetic state in the FMM (T T-C) regime resembles cluster glass, which is formed by the presence of charge ordered-antiferromagnetic clusters in the ferromagnetic matrix. The results shown in the present study could be regarded as the consequence of strong nature of phase separation in these films due to competing FMM and AFM-COI phases in these films which is known to be the generic feature of low bandwidth manganites. (C) 2018 Elsevier Ltd. All rights reserved.
机译:通过DC磁控溅射在LSAT(100)单晶基板上制备SM0.50SR0.50mNO3(SSMO)的单晶薄膜(SSMO)(厚度类似于200nm)。 X射线衍射Theta-2和ω-2θ扫描显示,这些薄膜(i)具有非常好的结晶度,(ii)沿着平面外C方向取向,(iii)在小拉伸下拉紧。这些薄膜的温度和磁场依赖性电气传输显示(i)尖锐的顺磁绝缘体(PMI)至铁磁性金属(FMM)转变,(ii)当经受磁场时的摩托镍仪(II)大增强,(iii)与磁性电阻率的迟滞变化场,(iv)(iv)PMI-FMM过渡附近的磁阻巨大发生。 FMM(T< T-C)制度中的磁力状态类似于簇玻璃,其通过在铁磁基质中存在电荷有序 - 反铁磁簇形成。本研究中所示的结果可以被认为是由于这些薄膜中所述薄膜中的相位分​​离性质的强烈性质的结果,该薄膜中已知是低带宽锰的通用特征。 (c)2018年elestvier有限公司保留所有权利。

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