Electrical and carrier transport properties of Au/Pr6O11/n-GaN MIS structure with a high-k rare-earth oxide interlayer at high temperature range

摘要

The electrical and carrier transport properties of Au/Pr6O11/n-GaN metal/interlayer/semiconductor (MIS) structure with an electron beam deposited high-k rare-earth oxide as an interlayer have been investigated in the temperature range of 270-420 K. The electrical characteristics such as current-voltage (I-V), turn-on voltage and series resistance (R-S) are analyzed at different temperatures. These analysis showed that the obtained barrier heights (Phi(b)) increase while ideality factor (n) and R-S decrease with increasing temperature. The characteristic temperature (T-0) is determined from the R-S against temperature plots, and the value (T-0) is well matched with each other. The calculated thermal coefficient (K-j) value is - 2.1 mV/K at >= 270 K. The obtained effective barrier height (1.22 eV) is consistent with the theoretical value. The temperature-dependent ideality factor values are in good agreement with characteristic energy of 31 meV. The estimated interface state density (N-SS) increases with decreasing temperature that could be associated with the molecular restructuring and reordering of the Pr6O11/n-GaN interface. The reverse bias results showed that the current conduction is dominated by Poole-Frenkel emission in the temperature range of 270-330 K while the Schottky emission is dominated in the temperature range of 360-420 K.