Reduction of self-heating effect in (Ga)ZnO thin film transistor

摘要

RF magnetron sputtering technique was employed to fabricate gallium zinc oxide ((Ga)ZnO) semiconductor thin film transistor (TFT) at 100 degrees C. X-ray diffraction and Scanning electron microscopy were used to identify the structure and morphology of (Ga)ZnO layer. Self-heating effect was very much reduced when compared with output characteristics of a TFT fabricated using undoped zinc oxide. The low deposition and processing temperatures make (Ga)ZnO-TFTs very promising for the flexible electronics.